A Symmetrical Optimized Doherty Power Amplifier for LTE Band41
نویسندگان
چکیده
A symmetric Power Amplifier with an optimized impedance quarter wave transmission line is presented using a thermally enhanced high Power LDMOS FET i.e. a 140W Infineon PTFC261402 device. This implementation is realized in the operating frequency of LTE Band41 (2.496GHz-2.69GHz) applicable for LTE base stations. This design achieves a high efficiency that persists for an output power back off region of 6dB. The efficiencies of both class AB and Doherty are compared with respect to their output powers. Doherty attains efficiency of 59.6% at P1dB of 50dBm and fulfils the requirement of obtaining higher efficiency at the back off levels necessary for the modern communication involving high PAPR signals. The gain flatness is for 200MHz bandwidth giving a maximum gain of 16dB.
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